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| SPICE MODEL: DRDNB21D Lead-free Green DRDNB21D COMPLEX ARRAY FOR DUAL RELAY DRIVER Features NEW PRODUCT * * * * * * Epitaxial Planar Die Construction Two Pre-Biased Transistors and Two Switching Diodes, Internally Connected in One Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability BC A SOT-363 Dim A B C D F H K M Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 0.65 Nominal Mechanical Data * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.006 grams (approximate) H J K L M a J D F L All Dimensions in mm 5 6 5 4 D1 D2 3 R1 R3 R1 = R3 = 2.2kW (nominal) R2 = R4 = 47kW (nominal) R1 R3 1 6 R2 Q1 Q2 R4 4 R2 R4 2 1 2 3 Maximum Ratings, Total Device Characteristic Power Dissipation (Note 3) @ TA = 25C unless otherwise specified Symbol Pd RqJA Tj, TSTG Value 200 625 -55 to +150 Unit mW C/W C Thermal Resistance, Junction to Ambient Air (Note 3) Operating and Storage Junction Temperature Range Maximum Ratings, Pre-Biased NPN Transistor Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - Continuous (Note 3) Notes: @ TA = 25C unless otherwise specified Value 50 -5 to +12 100 200 Unit V V mA mA Symbol VCC Vin IO IC 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30756 Rev. 3 - 2 1 of 5 www.diodes.com DRDNB21D a Diodes Incorporated Maximum Ratings, Switching Diode @ TA = 25C unless otherwise specified Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Value 100 75 53 500 250 4.0 2.0 Unit V V V mA mA A NEW PRODUCT Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 3) Average Rectified Output Current (Note 3) Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Electrical Characteristics, Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistor Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product* * Transistor - For Reference Only @ TA = 25C unless otherwise specified Max 3/4 1.1 0.3 3.6 0.5 3/4 +30 +20 3/4 Unit V V V mA uA 3/4 % % MHz VCE = 10V, IE = 5mA, f = 100MHz Test Condition VCC = 5V, IO = 100mA VO = 0.3V, IO = 5mA IO/Il = 50mA/0.25mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 10mA Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl DR1 DR2/R1 fT Min 0.5 3/4 3/4 3/4 3/4 80 -30 -20 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 250 Electrical Characteristics, Switching Diode Characteristic Reverse Breakdown Voltage (Note 4) Forward Voltage (Note 4) Symbol V(BR)R VF @ TA = 25C unless otherwise specified Min 75 0.62 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 0.72 0.855 1.0 1.25 2.5 50 30 25 4.0 4.0 Unit V V mA mA mA nA pF ns Test Condition IR = 10mA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, Tj = 150C VR = 25V, Tj = 150C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Reverse Current (Note 4) Total Capacitance Reverse Recovery Time Notes: IR CT trr 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Short duration pulse test used to minimize self-heating effect. DS30756 Rev. 3 - 2 2 of 5 www.diodes.com DRDNB21D Device Characteristics NEW PRODUCT 250 PD, POWER DISSIPATION (mW) 200 150 100 50 0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve (Total Device) 200 Pre-Biased NPN Transistor Elements VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) 1 IC/IB = 10 1000 VCE = 10 75 C 0.1 75 C -25 C 25 C hFE, DC CURRENT GAIN -25 C 25 C 100 0.01 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 100 100 10 75C VO = 5V VO = 0.2 IC, COLLECTOR CURRENT (mA) 25C 10 Vin, INPUT VOLTAGE (V) 1 -25C -25C 1 75 C 0.1 25C 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 5 Input Voltage vs. Collector Current Vin, INPUT VOLTAGE (V) Fig. 4 Collector Current vs. Input Voltage DS30756 Rev. 3 - 2 3 of 5 www.diodes.com DRDNB21D Pre-Biased NPN Transistor Elements ( Continued) IE = 0mA NEW PRODUCT 4 COB, CAPACITANCE (pF) 3 2 1 0 0 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 6 Output Capacitance Switching Diode Elements IF, INSTANTANEOUS FORWARD CURRENT (mA) IR, INSTANTANEOUS REVERSE CURRENT (nA) 1000 10000 TA = 125C 1000 100 TA = 75C 100 10 TA = -40C TA = 0C 10 TA = 25C 1 TA = 25C TA = 75C TA = 125C 1 TA = 0C TA = -40C 0.1 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 7 Typical Forward Characteristics 3 0.1 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Reverse Characteristics f = 1MHz CT, TOTAL CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance vs. Reverse Voltage DS30756 Rev. 3 - 2 4 of 5 www.diodes.com DRDNB21D Typical Application Circuit NEW PRODUCT L1 Relay1 D1 D2 L2 Relay2 RL1 RL2 R1 Q1 Q2 R3 R2 R4 DRDNB21D Typical Application Circuit using DRDNB21D with two independent relays. Ordering Information Device DRDNB21D-7 Notes: (Note 5) Marking Code RD08 Packaging SOT-363 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXX = Product Type Marking Code YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 1 = January RD08 Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 YM 2005 S Apr 4 May 5 Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30756 Rev. 3 - 2 5 of 5 www.diodes.com DRDNB21D |
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